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correct fet pin names

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This commit is contained in:
hneemann 2017-04-16 20:51:21 +02:00
parent 10b1fa73d4
commit 33bf560a53
8 changed files with 38 additions and 25 deletions
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2
src/main/java/de/neemann/digital/core/switching/FGNFET.java
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@ -29,7 +29,7 @@ public class FGNFET extends NFET {
* @param attr the attributes
*/
public FGNFET(ElementAttributes attr) {
super(attr);
super(attr, false);
getOutput1().setPinDescription(DESCRIPTION);
getOutput2().setPinDescription(DESCRIPTION);
programmed = attr.get(Keys.BLOWN);

2
src/main/java/de/neemann/digital/core/switching/FGPFET.java
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@ -29,7 +29,7 @@ public class FGPFET extends NFET {
* @param attr the attributes
*/
public FGPFET(ElementAttributes attr) {
super(attr);
super(attr, true);
getOutput1().setPinDescription(DESCRIPTION);
getOutput2().setPinDescription(DESCRIPTION);
programmed = attr.get(Keys.BLOWN);

9
src/main/java/de/neemann/digital/core/switching/NFET.java
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@ -32,11 +32,18 @@ public class NFET extends Node implements Element {
* @param attr the attributes
*/
public NFET(ElementAttributes attr) {
s = new Switch(attr, false);
this(attr, false);
s.getOutput1().setPinDescription(DESCRIPTION);
s.getOutput2().setPinDescription(DESCRIPTION);
}
NFET(ElementAttributes attr, boolean pChan) {
if (pChan)
s = new Switch(attr, false, "S", "D");
else
s = new Switch(attr, false, "D", "S");
}
@Override
public void setInputs(ObservableValues inputs) throws NodeException {
input = inputs.get(0).checkBits(1, this).addObserverToValue(this);

2
src/main/java/de/neemann/digital/core/switching/PFET.java
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@ -26,7 +26,7 @@ public class PFET extends NFET {
* @param attr the attributes
*/
public PFET(ElementAttributes attr) {
super(attr);
super(attr, true);
getOutput1().setPinDescription(DESCRIPTION);
getOutput2().setPinDescription(DESCRIPTION);
}

2
src/main/java/de/neemann/digital/core/switching/Relay.java
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@ -49,7 +49,7 @@ public class Relay extends Node implements Element {
*/
public Relay(ElementAttributes attr, boolean invers) {
this.invers = invers;
s = new Switch(attr, invers);
s = new Switch(attr, invers, "out1", "out2");
}
@Override

12
src/main/java/de/neemann/digital/core/switching/Switch.java
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@ -35,7 +35,9 @@ public class Switch implements Element, Observer {
* @param attr the elements attributes
*/
public Switch(ElementAttributes attr) {
this(attr, attr.get(Keys.CLOSED));
this(attr, attr.get(Keys.CLOSED), "out1", "out2");
output1.setPinDescription(DESCRIPTION);
output2.setPinDescription(DESCRIPTION);
}
/**
@ -43,12 +45,14 @@ public class Switch implements Element, Observer {
*
* @param attr the elements attributes
* @param closed true if switch is closed
* @param out1 name of output 1
* @param out2 name of output 2
*/
public Switch(ElementAttributes attr, boolean closed) {
public Switch(ElementAttributes attr, boolean closed, String out1, String out2) {
bits = attr.getBits();
this.closed = closed;
output1 = new ObservableValue("out1", bits, true).setPinDescription(DESCRIPTION).setBidirectional().set(0, true);
output2 = new ObservableValue("out2", bits, true).setPinDescription(DESCRIPTION).setBidirectional().set(0, true);
output1 = new ObservableValue(out1, bits, true).setBidirectional().set(0, true);
output2 = new ObservableValue(out2, bits, true).setBidirectional().set(0, true);
}
@Override

17
src/main/resources/lang/lang_de.xml
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@ -365,27 +365,28 @@ Die gesammte Speichergröße beträgt damit damit dx*dy*2 Speicherworte.</string
<string name="elem_NFET">N-Kanal FET</string>
<string name="elem_NFET_tt">N-Kanal Feldeffekttransistor. Der Bulk ist mit Masse verbunden jedoch wird der Transistor ohne eine Body-Diode simuliert.</string>
<string name="elem_NFET_pin_G">Gate</string>
<string name="elem_NFET_pin_out2">Source</string>
<string name="elem_NFET_pin_out1">Drain</string>
<string name="elem_NFET_pin_S">Source</string>
<string name="elem_NFET_pin_D">Drain</string>
<string name="elem_PFET">P-Kanal FET</string>
<string name="elem_PFET_tt">P-Kanal Feldeffekttransistor. Der Bulk ist mit der pos. Versorgung verbunden, jedoch wird der Transistor ohne eine Body-Diode simuliert.</string>
<string name="elem_PFET_pin_G">Gate</string>
<string name="elem_PFET_pin_out1">Source</string>
<string name="elem_PFET_pin_out2">Drain</string>
<string name="elem_PFET_pin_S">Source</string>
<string name="elem_PFET_pin_D">Drain</string>
<string name="elem_FGNFET">N-Kanal Floating Gate FET</string>
<string name="elem_FGNFET_tt">N-Kanal Feldeffekttransistor mit Floating Gate. Der Bulk ist mit Masse verbunden jedoch wird der Transistor ohne eine Body-Diode simuliert.
Ist das Floating Gate geladen, ist der Transistor immer sperrend.</string>
<string name="elem_FGNFET_pin_G">Gate</string>
<string name="elem_FGNFET_pin_out2">Source</string>
<string name="elem_FGNFET_pin_out1">Drain</string>
<string name="elem_FGNFET_pin_S">Source</string>
<string name="elem_FGNFET_pin_D">Drain</string>
<string name="elem_FGPFET">P-Kanal Floating Gate FET</string>
<string name="elem_FGPFET_tt">P-Kanal Feldeffekttransistor mit Floating Gate. Der Bulk ist mit Masse verbunden jedoch wird der Transistor ohne eine Body-Diode simuliert.
Ist das Floating Gate geladen, ist der Transistor immer sperrend.</string>
<string name="elem_FGPFET_pin_G">Gate</string>
<string name="elem_FGPFET_pin_out1">Source</string>
<string name="elem_FGPFET_pin_out2">Drain</string>
<string name="elem_FGPFET_pin_S">Source</string>
<string name="elem_FGPFET_pin_D">Drain</string>
<string name="elem_RotEncoder">Drehencoder</string>
<string name="elem_RotEncoder_tt">Drehknopf mit Drehencoder zur zustandsfreien Erfassung der Drehbewegung.</string>

17
src/main/resources/lang/lang_en.xml
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@ -352,28 +352,29 @@
<string name="elem_NFET">N-Channel FET</string>
<string name="elem_NFET_tt">N-Channel Field Effect Transistor. The bulk is connected to ground and the transistor is simulated without a body diode.</string>
<string name="elem_NFET_pin_G">Gate</string>
<string name="elem_NFET_pin_out2">Source</string>
<string name="elem_NFET_pin_out1">Drain</string>
<string name="elem_NFET_pin_S">Source</string>
<string name="elem_NFET_pin_D">Drain</string>
<string name="elem_FGNFET">N-Channel floating gate FET</string>
<string name="elem_FGNFET_tt">N-Channel Floating Gate Field Effect Transistor. The bulk is connected to ground and the transistor is simulated without a body diode.
If there is a charge stored in the floating gate, the fet isn't conducting even if the gate is high.</string>
<string name="elem_FGNFET_pin_G">Gate</string>
<string name="elem_FGNFET_pin_out2">Source</string>
<string name="elem_FGNFET_pin_out1">Drain</string>
<string name="elem_FGNFET_pin_S">Source</string>
<string name="elem_FGNFET_pin_D">Drain</string>
<string name="elem_FGPFET">P-Channel floating gate FET</string>
<string name="elem_FGPFET_tt">P-Channel Floating Gate Field Effect Transistor. The bulk is connected to ground and the transistor is simulated without a body diode.
If there is a charge stored in the floating gate, the fet isn't conducting even if the gate is low.</string>
<string name="elem_FGPFET_pin_G">Gate</string>
<string name="elem_FGPFET_pin_out1">Source</string>
<string name="elem_FGPFET_pin_out2">Drain</string>
<string name="elem_FGPFET_pin_S">Source</string>
<string name="elem_FGPFET_pin_D">Drain</string>
<string name="elem_PFET">P-Channel FET</string>
<string name="elem_PFET_tt">P-Channel Field Effect Transistor. The bulk is connected to the pos. voltage rail and the transistor is simulated without a body diode.</string>
<string name="elem_PFET_pin_G">Gate</string>
<string name="elem_PFET_pin_out1">Source</string>
<string name="elem_PFET_pin_out2">Drain</string>
<string name="elem_PFET_pin_S">Source</string>
<string name="elem_PFET_pin_D">Drain</string>
<string name="elem_RotEncoder">Rotary Encoder</string>
<string name="elem_RotEncoder_tt">Rotary knob with rotary encoder for stateless detecting rotational movements.</string>
<string name="elem_RotEncoder_pin_A">encoder signal A</string>